Silicon N Channel MOS Type High-Speed Switching Applications

High-Speed Switching Applications ​​​​​​​ • 4 V drive • Low ON-resistance: Ron = 530 mΩ (max) (@VGS = 4 V) Ron = 310 mΩ (max) (@VGS = 10 V)

文件：138.5 Kbytes 页数：6 Pages

TOSHIBA

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Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

文件：186.5 Kbytes 页数：6 Pages

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Small-signal MOSFET

Polarity：N-ch\nRoHS Compatible Product(s) (#)：Available Drain current ID 1.2 A \nDrain-Source voltage VDSS 20 V \nGate-Source voltage VGSS +/-20 V ;

Toshiba

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