TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type

○ Power Management Switch Applications ○ High-Speed Switching Applications • 1.8V drive • Low ON-resistance: Ron = 286 mΩ (max) (@VGS = 1.8V) : Ron = 167 mΩ (max) (@VGS = 2.5V) : Ron = 123 mΩ (max) (@VGS = 4.0V)

文件：215.01 Kbytes 页数：7 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Small Low ON resistance MOSFETs

Polarity：N-ch\nAEC-Q101：Conform(*)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰国 Drain current ID 2 A \nPower Dissipation PD 0.5 W \nDrain-Source voltage VDSS 30 V \nGate-Source voltage VGSS +/-12 V ;

Toshiba

东芝

CST3

TOSHIBA

东芝

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TOSHIBA/东芝

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