Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

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丝印：KKC；Package：2-2U1A；TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type

Power Management Switch Applications High-Speed Switching Applications • AEC-Q101 qualified (Note 1) • 1.5 V drive • Low ON-resistance Ron = 211 mΩ (max) (@VGS = 1.8 V) Ron = 161 mΩ (max) (@VGS = 2.5 V) Ron = 123 mΩ (max) (@VGS = 4.0 V)

文件：335.06 Kbytes 页数：7 Pages

TOSHIBA

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Power Management Switch Applications

Power Management Switch Applications High-Speed Switching Applications • AEC-Q101 qualified (Note 1) • 1.5 V drive • Low ON-resistance: Ron = 304 mΩ (max) (@VGS = 1.5 V) Ron = 211 mΩ (max) (@VGS = 1.8 V) Ron = 161 mΩ (max)

文件：140.67 Kbytes 页数：6 Pages

TOSHIBA

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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type

Power Management Switch Applications High-Speed Switching Applications • AEC-Q101 qualified (Note 1) • 1.5 V drive • Low ON-resistance Ron = 211 mΩ (max) (@VGS = 1.8 V) Ron = 161 mΩ (max) (@VGS = 2.5 V) Ron = 123 mΩ (max) (@VGS = 4.0 V)

文件：335.06 Kbytes 页数：7 Pages

TOSHIBA

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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type

文件：186.62 Kbytes 页数：6 Pages

TOSHIBA

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Small Low ON resistance MOSFETs

Polarity：N-ch\nAEC-Q101：Conform(*)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰国 Drain current ID 2 A \nPower Dissipation PD 0.5 W \nDrain-Source voltage VDSS 20 V \nGate-Source voltage VGSS +/-10 V ;

Toshiba

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