Small Low ON resistance MOSFETs

Polarity：N-ch\nGeneration：U-MOSⅢ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：泰国 Drain current ID 0.1 A \nDrain-Source voltage VDSS 30 V \nGate-Source voltage VGSS +/-20 V ;

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MOSFETs Silicon N-Channel MOS (U-MOS??

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Load Switching Applications

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)

Load Switching Applications • 2.5 V drive • Low ON-resistance: RDS(ON) = 3.6 Ω (max) (@VGS = 4 V) RDS(ON) = 6.0 Ω (max) (@VGS = 2.5 V)

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)

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