丝印：G；Package：CST3C；MOSFETs Silicon P-Channel MOS

Applications • Power Management Switches Features (1) 1.2 V drive (2) Low drain-source on-resistance : RDS(ON) = 1040 mΩ (typ.) (@VGS = -1.2 V) RDS(ON) = 676 mΩ (typ.) (@VGS = -1.5 V) RDS(ON) = 540 mΩ (typ.) (@VGS = -1.8 V) RDS(ON) = 400 mΩ (typ.) (@VGS = -2.5 V) RDS(ON) = 290 mΩ (typ.)

文件：381.17 Kbytes 页数：8 Pages

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丝印：G；Package：CST3C；MOSFETs Silicon P-Channel MOS

文件：385.97 Kbytes 页数：8 Pages

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MOSFETs Silicon P-Channel MOS

Applications • Power Management Switches Features (1) 1.2 V drive (2) Low drain-source on-resistance : RDS(ON) = 1040 mΩ (typ.) (@VGS = -1.2 V) RDS(ON) = 676 mΩ (typ.) (@VGS = -1.5 V) RDS(ON) = 540 mΩ (typ.) (@VGS = -1.8 V) RDS(ON) = 400 mΩ (typ.) (@VGS = -2.5 V) RDS(ON) = 290 mΩ (typ.)

文件：381.17 Kbytes 页数：8 Pages

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Small Low ON resistance MOSFETs

Polarity：P-ch\nGeneration：U-MOSⅦ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：泰国 Drain current ID -1 A \nPower Dissipation PD 0.5 W \nDrain-Source voltage VDSS -12 V \nGate-Source voltage VGSS +/-10 V ;

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