丝印：S6；Package：CST3；MOSFETs Silicon P-Channel MOS

Applications • High-Speed Switching Features (1) 1.2 V drive (2) Low drain-source on-resistance : RDS(ON) = 390 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 480 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 660 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 900 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 4000 mΩ (max) (@VGS = -1.

文件：349.02 Kbytes 页数：9 Pages

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Small Low ON resistance MOSFETs

Toshiba

东芝

MOSFETs Silicon P-Channel MOS

Applications • High-Speed Switching Features (1) 1.2 V drive (2) Low drain-source on-resistance : RDS(ON) = 390 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 480 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 660 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 900 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 4000 mΩ (max) (@VGS = -1.

文件：452.08 Kbytes 页数：9 Pages

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东芝

CST3

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