首页 >SGP20N60XT>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
ShortCircuitRatedIGBT | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
FastS-IGBTinNPT-technology FastS-IGBTinNPT-technology •75lowerEoffcomparedtopreviousgenerationcombinedwith lowconductionlosses •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter •NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistributio | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
FastIGBTinNPT-technology75lowerEoffcomparedtopreviousgeneration | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
HighSpeedIGBTinNPT-technology HighSpeedIGBTinNPT-technology •30lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedforoperationabove30kHz •NPT-Technologyfor600Vapplicationsoffers: -parallelswitchingcapability -moderateEoffincreasewithtemperature - | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
HighSpeedIGBTinNPT-technology30lowerEoffcomparedtopreviousgeneration | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
ShortCircuitRatedIGBT | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode FastS-IGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode •75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter •NPT-Technologyfor600Vapplicatio | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
HighSpeedIGBTinNPT-technology HighSpeedIGBTinNPT-technology •30lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedforoperationabove30kHz •NPT-Technologyfor600Vapplicationsoffers: -parallelswitchingcapability -moderateEoffincreasewithtemperature | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
HighSpeedIGBTinNPT-technology30lowerEoffcomparedtopreviousgeneration | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
CoolMOSPowerTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
IscN-ChannelMOSFETTransistor •FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •Reducedswitchingandconductionlosses •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Switchingapplication | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
CoolMOSPowerTransistor Features •Newrevolutionaryhighvoltagetechnology •Intrinsicfast-recoverybodydiode •Extremelylowreverserecoverycharge •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •Periodicavalancherated •Qualifiedforindustrialgradeapplicationsaccording | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
CoolMOSTMPowerTransistorFeaturesNewrevolutionaryhighvoltagetechnologyExtremedv/dtrated | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Intrinsicfast-recoverybodydiode •Extremelowreverserecoverycharge •Pb-freeleadplating; | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
iscN-ChannelMOSFETTransistor •DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.22Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor •DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.22Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Intrinsicfast-recoverybodydiode •Extremelowreverserecoverycharge •Pb-freeleadplating; | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
INFINEON |
23+ |
8000 |
只做原装现货 |
询价 | |||
INFINEON/英飞凌 |
23+ |
TO220 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
INFINEON/英飞凌 |
2022 |
TO220 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
INFINEON/英飞凌 |
24+ |
TO220 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
询价 | ||
FAIRCHILD |
23+ |
TO-TO-220 |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
FAIRC |
2023+ |
TO-220 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
FAIRC |
2020+ |
TO-220 |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
询价 | ||
FAIRCHILD/仙童 |
23+ |
TO-220 |
10000 |
公司只做原装正品 |
询价 | ||
FAIRCHILD/仙童 |
TO-220 |
22+ |
6000 |
十年配单,只做原装 |
询价 | ||
FAIRCHILD/仙童 |
22+ |
TO-220 |
25000 |
只做原装进口现货,专注配单 |
询价 |
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