丝印：G20N60HS；Package：PG-TO-247-3；High Speed IGBT in NPT-technology

High Speed IGBT in NPT-technology • 30 lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers:    - parallel switching capability    - moderate Eoff increase with temperature    -

文件：426.22 Kbytes 页数：11 Pages

INFINEON

英飞凌

High Speed IGBT in NPT-technology 30 lower Eoff compared to previous generation

文件：388.34 Kbytes 页数：12 Pages

INFINEON

英飞凌

分立式IGBT

Infineon provides a huge IGBT portfolio addressing Soft Switching/Resonant and Hard Switching Topologies. ·30% lower E off compared to previous generation\n ·Short circuit withstand time – 10μs\n ·Designed for operation above 30kHz\n ·High ruggedness, temperature stable behaviour\n ·Pb-free lead plating; RoHS compliant\n ·Qualified according to JEDEC for target applications;

Infineon

英飞凌

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 36A 178W TO247-3

INFINEON

英飞凌