SGP20N60HS芯片代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
SGP20N60HS	文件：426.22 Kbytes Page：11 Pages	丝印：G20N60HS；Package：PG-TO-220-3-1；High Speed IGBT in NPT-technology High Speed IGBT in NPT-technology • 30 lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - 文件：426.22 Kbytes 页数：11 Pages	Infineon 英飞凌	Infineon
SGW20N60HS	文件：426.22 Kbytes Page：11 Pages	丝印：G20N60HS；Package：PG-TO-247-3；High Speed IGBT in NPT-technology High Speed IGBT in NPT-technology • 30 lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - 文件：426.22 Kbytes 页数：11 Pages	Infineon 英飞凌	Infineon
G20N60HS	文件：426.22 Kbytes Page：11 Pages	High Speed IGBT in NPT-technology High Speed IGBT in NPT-technology • 30 lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - 文件：426.22 Kbytes 页数：11 Pages	Infineon 英飞凌	Infineon

更多G20N60HS供应商更新时间2025-9-20 10:10:00