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MMD80R900P

800V0.9(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMD80R900P

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MMD80R900PC

800V0.9(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMD80R900PCRH

800V0.9(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMD80R900PCRH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=6A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MMD80R900PRH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=6A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MMD80R900PRH

800V0.9(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMF80R900P

800V0.9(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMF80R900P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MMF80R900PB

800V0.9ohmN-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMF80R900PBTH

800V0.9ohmN-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMF80R900PC

800V0.9(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMF80R900PCTH

800V0.9(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMF80R900PCTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=6A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MMF80R900PTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=6A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MMF80R900PTH

800V0.9(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMP80R900PC

800V0.9(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMP80R900PCTH

800V0.9(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMP80R900PCTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=6A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

供应商型号品牌批号封装库存备注价格
NCE
2017+
TO-252
13699
深圳仓库现货价格优
询价
NCE
23+
TO-252
96830
全新原装真实库存含13点增值税票!
询价
NCE
20+
TO-252
36900
原装优势主营型号-可开原型号增税票
询价
NCE/新洁能
TO-252
265209
假一罚十原包原标签常备现货!
询价
NCE/新洁能
23+
TO-252
10000
公司只做原装正品
询价
NCE/新洁能
23+
TO-252
50000
全新原装正品现货,支持订货
询价
NCE
21+
TO-252
10000
原装现货假一罚十
询价
NCE/新洁能
2022
TO-252
80000
原装现货,OEM渠道,欢迎咨询
询价
NCE/新洁能
2022+
TO-252
50000
原厂代理 终端免费提供样品
询价
NCE/新洁能
TO-252
22000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
更多NCE80R900K供应商 更新时间2024-5-26 13:38:00