Dual N-Channel Enhancement Mode Field Effect Transistor

General Description These dual N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fas

文件：258.25 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

SOT23-6 Dual N-Channel Enhancement Mode Field Effect Transistor

General Description These dual N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance a

文件：308.47 Kbytes 页数：7 Pages

UMW

友台半导体

SOT23-6 Dual N-Channel Enhancement Mode Field Effect Transistor

Features 0.51A, 50V, RDS(ON) = 2W @ VGS=10V High density cell design for low RDS(ON). Proprietary SOT23-6 package design using copper lead frame for superior thermal and electrical capabilities. High saturation current.

文件：301.19 Kbytes 页数：7 Pages

EVVOSEMI

翊欧

丝印：02Nf；Package：SOT23-6；50V Dual N-Channel Enhancement Mode MOSFET

文件：1.66584 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

Field Effect Transistor - Dual, N-Channel, Enhancement Mode

文件：335.81 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

双 N 沟道增强型场效应晶体管，50V，0.51A，2Ω

这些双N沟道增强模式功率场效应晶体管采用飞兆专有的高单元密度、DMOS技术生产。 这一密度非常高的工艺是专为最大限度地降低通态电阻，提供稳固和可靠的性能以及快速开关而定制的。 这些器件特别适合需要低电流高边开关的低电压应用。 •0.51 A，50 V。RDS(ON) = 2 Ω @ VGS = 10 V。\n•采用高密度单元设计，可实现极低的RDS(ON)。\n•专有SuperSOTTM-6封装设计采用铜引脚架构，以获得出色的热性能和电气性能。\n•高饱和电流。;

ONSEMI

安森美半导体