The RF Line NPN Silicon Power Transistor 30W, 1.6GHz, 28V

Designed for 28 V microwave large–signal, common base, Class C, CW amplifier applications in the range 1600 – 1640 MHz • Specified 28 V, 1.6 GHz Class C characteristics Output power = 30 W Minimum gain = 7.5 dB, @ 30 W Minimum efficiency = 40 @ 30 W • Characterized with series equ

文件：170.45 Kbytes 页数：6 Pages

MA-COM

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. • Specified 28 Volt, 1.6 GHz Class–C Characteristics Output Power = 30 Watts Minimum Gain = 7.5 dB, @ 30 Watts

文件：108.72 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

SILICON N-CHANNEL RF POWER MOSFET

DESCRIPTION: The MRF161 is an Enhancement Mode N-Channel MOS Broadband RF Power Transistor for Wideband Large Signal Amplifier and Oscillator Applications from 2.0 to 400 MHz.

文件：16.16 Kbytes 页数：1 Pages

ASI

MOSFET BROADBAND RF POWER FETs

20 W, 500 MHz MOSFET BROADBAND RF POWER FETs Designed primarily for wideband large–signal output and driver from 30– 500MHz. • Low Crss— 4.5 pF @ VDS= 28 V • MRF166C — Typical Performance at 400 MHz, 28 Vdc Output Power = 20 W Gain = 17 dB Efficiency = 55 • Option

文件：154.8 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

MOSFET BROADBAND RF POWER FETs

20 W, 500 MHz MOSFET BROADBAND RF POWER FETs Designed primarily for wideband large–signal output and driver from 30– 500MHz. • Low Crss— 4.5 pF @ VDS= 28 V • MRF166C — Typical Performance at 400 MHz, 28 Vdc Output Power = 20 W Gain = 17 dB Efficiency = 55 • Option

文件：154.8 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

TMOS BROADBAND RF POWER FET

40 W, 500 MHz TMOS BROADBAND RF POWER FET Designed primarily for wideband large–signal output and driver stages to 500 MHz. • Push–Pull Configuration Reduces Even Numbered Harmonics • Typical Performance at 400 MHz, 28 Vdc Output Power = 40 Watts Gain = 13 dB Efficie

文件：134.51 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

N-Channel Enhancement Mode TMOS RF FET

DESCRIPTION: The ASI MRF171 is a gold metallized N-Channel Enhancement mode MOSFET, intended for use in 28 VDC large signal applications to 200 MHz. FEATURES: • PG = 12 dB min at 150 MHz • Omnigold™ Metalization System • 2 – 200 MHz operation

文件：34.8 Kbytes 页数：1 Pages

ASI

The RF MOSFET Line 45W, 150MHz, 28V

Designed primarily for wideband large–signal output and driver stages from 30–200 MHz. N–Channel enhancement mode MOSFET • Guaranteed performance at 150 MHz, 28 Vdc Output power = 45 W Power gain = 17 dB (min) Efficiency = 60 (min) • Excellent thermal stability, idea

文件：472.26 Kbytes 页数：14 Pages

MA-COM

MOSFET BROADBAND RF POWER FET

Designed primarily for wideband large–signal output and driver stages from 30–200 MHz. N–Channel enhancement mode MOSFET • Guaranteed performance at 150 MHz, 28 Vdc Output power = 45 W Power gain = 17 dB (min) Efficiency = 60 (min) • Excellent thermal stability, ideally suited for C

文件：225.1 Kbytes 页数：12 Pages

MACOM

VHF POWER MOSFET N-Channel Enhancement Mode

DESCRIPTION: The ASI MRF172 is Designed for wideband large-signal output and driver stages in the 2.0-200 MHz frequency range. FEATURES: •PG= 10 dB Min. at 150 MHz • 30:1 Load VSWRCapability • Omnigold™ Metalization System

文件：15.27 Kbytes 页数：1 Pages

ASI