TMOS BROADBAND RF POWER FET

40 W, 500 MHz TMOS BROADBAND RF POWER FET Designed primarily for wideband large–signal output and driver stages to 500 MHz. • Push–Pull Configuration Reduces Even Numbered Harmonics • Typical Performance at 400 MHz, 28 Vdc Output Power = 40 Watts Gain = 13 dB Efficie

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Motorola

摩托罗拉

TMOS BROADBAND RF POWER FET

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MACOM

The RF MOSFET Line 40W, 500MHz, 28V

文件：567.02 Kbytes 页数：11 Pages

MA-COM

The RF MOSFET Line 40W, 500MHz, 28V

文件：567.02 Kbytes 页数：11 Pages

MA-COM

The RF MOSFET Line

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MA-COM

The RF MOSFET Line 40W, 500MHz, 28V

Designed primarily for wideband large–signal output and driver stages to 30 – 500 MHz. ·N–Channel enhancement mode MOSFET\n·Typical performance at 175 MHz, 28 Vdc: Output power = 40 W, Gain = 17 dB, Efficiency = 60%\n·Push–Pull Configuration Reduces Even Numbered Harmonics\n·Low Crss — 4.0 pF @ VDS = 28 V\n·100% Tested for Load Mismatch at allPhase Angles with 30:1 VSWR\n·Faci;

MACOM

Package：412-01；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 2CH 65V 500MHZ 412-01

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