MRF166W数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

Designed primarily for wideband large–signal output and driver stages to 30 – 500 MHz.

特性 Features

·N–Channel enhancement mode MOSFET
·Typical performance at 175 MHz, 28 Vdc: Output power = 40 W, Gain = 17 dB, Efficiency = 60%
·Push–Pull Configuration Reduces Even Numbered Harmonics
·Low Crss — 4.0 pF @ VDS = 28 V
·100% Tested for Load Mismatch at allPhase Angles with 30:1 VSWR
·Facilitates Manual Gain Control, ALC and Modulation Techniques
·Excellent Thermal Stability Ideally Suited for Class A Operation
·Guaranteed performance at 500 MHz, 28 Vdc: Output power = 40 W, Gain = 14 dB, Efficiency = 50%

应用 Application

·Aerospace and Defense
·ISM