MRF166W分立半导体产品的晶体管-FETMOSFET-射频规格书PDF中文资料

40 W, 500 MHz TMOS BROADBAND RF POWER FET

Designed primarily for wideband large–signal output and driver stages to 500 MHz.

• Push–Pull Configuration Reduces Even Numbered Harmonics

• Typical Performance at 400 MHz, 28 Vdc

Output Power = 40 Watts

Gain = 13 dB

Efficiency = 50

• Typical Performance at 175 MHz, 28 Vdc

Output Power = 40 Watts

Gain = 17 dB

Efficiency = 60

• Excellent Thermal Stability, Ideally Suited for Class A Operation

• Facilitates Manual Gain Control, ALC and Modulation Techniques

• 100 Tested for Load Mismatch at All Phase Angles with 30:1 VSWR

• Low Crss— 4.5 pF @ VDS= 28 Volts

• Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.