| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS The RF MOSFET Line RF Power Field Effect TransistorsThe RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1930 文件：275.29 Kbytes 页数：8 Pages | MOTOROLA 摩托罗拉 | MOTOROLA | ||
THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS The RF MOSFET Line RF Power Field Effect TransistorsThe RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1930 文件：275.29 Kbytes 页数：8 Pages | MOTOROLA 摩托罗拉 | MOTOROLA | ||
RF POWER FIELD EFFECT TRANSISTORS The RF MOSFET Line RF Power Field Effect TransistorsThe RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB 文件：405.18 Kbytes 页数：8 Pages | MOTOROLA 摩托罗拉 | MOTOROLA | ||
RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN -PCS/cellular radio and WLL 文件：393.1 Kbytes 页数：12 Pages | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | FREESCALE | ||
RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN -PCS/cellular radio and WLL 文件：393.1 Kbytes 页数：12 Pages | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | FREESCALE | ||
RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN -PCS/cellular radio and WLL 文件：393.1 Kbytes 页数：12 Pages | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | FREESCALE | ||
RF POWER FIELD EFFECT TRANSISTORS The RF MOSFET Line RF Power Field Effect TransistorsThe RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB 文件：405.18 Kbytes 页数：8 Pages | MOTOROLA 摩托罗拉 | MOTOROLA | ||
RF POWER FIELD EFFECT TRANSISTORS The RF MOSFET Line RF Power Field Effect TransistorsThe RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB 文件：405.18 Kbytes 页数：8 Pages | MOTOROLA 摩托罗拉 | MOTOROLA | ||
RF POWER FIELD EFFECT TRANSISTORS The RF MOSFET Line RF Power Field Effect TransistorsThe RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB 文件：405.18 Kbytes 页数：8 Pages | MOTOROLA 摩托罗拉 | MOTOROLA | ||
RF Power Field Effect Transistors Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. Specified for GSM1930 - 1990 MHz. • GSM Performance, Full Frequency 文件：490.03 Kbytes 页数：8 Pages | MOTOROLA 摩托罗拉 | MOTOROLA |
技术参数
- Min Frequency(MHz)：
960
- Max Frequency(MHz)：
1215
- Bias Voltage(V)：
28.0
- Pout(W)：
5.00
- Gain(dB)：
8.50
- Efficiency(%)：
45
- Type：
Bipolar
- Package：
Flange Ceramic Pkg
- Package Category：
Ceramic Flange Mount
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOTOROLA |
24+/25+ |
20 |
原装正品现货库存价优 |
询价 | |||
M/A-COM |
13+ |
1693 |
原装分销 |
询价 | |||
MRF |
3200 |
原装长期供货! |
询价 | ||||
东芝 |
100 |
原装现货,价格优惠 |
询价 | ||||
FREESCALE |
05/06+ |
36 |
全新原装100真实现货供应 |
询价 | |||
MOTO |
24+ |
SOP |
6980 |
原装现货,可开13%税票 |
询价 | ||
MOT |
06+ |
TO59 |
2500 |
原装现货价格有优势量大可以发货 |
询价 | ||
FREESCA |
25+ |
4 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | |||
原厂 |
24+ |
原厂封装 |
7860 |
原装现货假一罚十 |
询价 | ||
FREESCALE |
17+ |
SMD |
6200 |
100%原装正品现货 |
询价 |
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