RF Power Field Effect Transistor

Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN -PCS/cellular radio and WLL applications. Specified for GSM 1930 - 1990 MHz. • GSM Performance, Full Fre

文件：332.4 Kbytes 页数：12 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. Specified for GSM1930 - 1990 MHz. • GSM Performance, Full Frequency

文件：490.03 Kbytes 页数：8 Pages

Motorola

摩托罗拉

RF Power Field Effect Transistor

Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN -PCS/cellular radio and WLL applications. Specified for GSM 1930 - 1990 MHz. • GSM Performance, Full Fre

文件：332.4 Kbytes 页数：12 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistor

Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN -PCS/cellular radio and WLL applications. Specified for GSM 1930 - 1990 MHz. • GSM Performance, Full Fre

文件：332.4 Kbytes 页数：12 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. Specified for GSM1930 - 1990 MHz. • GSM Performance, Full Frequency

文件：490.03 Kbytes 页数：8 Pages

Motorola

摩托罗拉

RF Power Field Effect Transistors

Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. Specified for GSM1930 - 1990 MHz. • GSM Performance, Full Frequency

文件：490.03 Kbytes 页数：8 Pages

Motorola

摩托罗拉

RF Power Field Effect Transistors

Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. Specified for GSM1930 - 1990 MHz. • GSM Performance, Full Frequency

文件：490.03 Kbytes 页数：8 Pages

Motorola

摩托罗拉

1930-1990 MHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETs

Overview MRF18060BLR3, MRF18060BLSR3 removed from active portfolio. View replacement parts via Part Number Search. \n•GSM Performance, Full Frequency Band (1930 – 1990 MHz)\nPower Gain: 13 dB (Typ) @ 60 Watts CW\n\tEfficiency: 45% (Typ) @ 60 Watts CW\n\n•Capable of Handling 10:1 VSWR, @ 26 Vdc, 1960 MHz, 60 Watts CW Output Power\n\n•Internally Matched for Ease of Use\n\n•High Gain, High Efficiency and High L;

恩XP

恩智浦

1900-1990 MHz, 60 W, 26 V Lateral N-Channel RF Power MOSFET

Overview MRF18060BR3 removed from active portfolio. View replacement parts via Part Number Search. \n•GSM Performance, Full Frequency Band (1930 – 1990 MHz)\n   Power Gain — 13 dB (Typ) @ 60 Watts (CW)\n   Efficiency — 45% (Typ) @ 60 Watts (CW)\n•Internally Matched, Controlled Q, for Ease of Use\n•High Gain, High Efficiency and High Linearity\n•Integrated ESD Protection\n•Designed for Maximum;

恩XP

恩智浦