MRF1说明书PDF资料原装现货美高森美第24页-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
MRF18085ALSR3	文件：379.56 Kbytes Page：8 Pages	RF Power Field Effect Transistors The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellu 文件：379.56 Kbytes 页数：8 Pages	MOTOROLA 摩托罗拉	MOTOROLA
MRF18085ALSR3	文件：409.77 Kbytes Page：8 Pages	The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellu 文件：409.77 Kbytes 页数：8 Pages	MOTOROLA 摩托罗拉	MOTOROLA
MRF18085AR3	文件：409.77 Kbytes Page：8 Pages	The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellu 文件：409.77 Kbytes 页数：8 Pages	MOTOROLA 摩托罗拉	MOTOROLA
MRF18085AR3	文件：379.56 Kbytes Page：8 Pages	RF Power Field Effect Transistors The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellu 文件：379.56 Kbytes 页数：8 Pages	MOTOROLA 摩托罗拉	MOTOROLA
MRF18085B	文件：610.58 Kbytes Page：12 Pages	RF Power Field Effect Transistors The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. • GSM and GSM EDGE Performance, Full F 文件：610.58 Kbytes 页数：12 Pages	MOTOROLA 摩托罗拉	MOTOROLA
MRF18085B	文件：445.63 Kbytes Page：12 Pages	RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. • GSM and GSM EDGE Performance, Full Frequency Band (193 文件：445.63 Kbytes 页数：12 Pages	FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	FREESCALE
MRF18085BLR3	文件：445.63 Kbytes Page：12 Pages	RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. • GSM and GSM EDGE Performance, Full Frequency Band (193 文件：445.63 Kbytes 页数：12 Pages	FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	FREESCALE
MRF18085BLSR3	文件：610.58 Kbytes Page：12 Pages	RF Power Field Effect Transistors The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. • GSM and GSM EDGE Performance, Full F 文件：610.58 Kbytes 页数：12 Pages	MOTOROLA 摩托罗拉	MOTOROLA
MRF18085BLSR3	文件：445.63 Kbytes Page：12 Pages	RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. • GSM and GSM EDGE Performance, Full Frequency Band (193 文件：445.63 Kbytes 页数：12 Pages	FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	FREESCALE
MRF18085BR3	文件：610.58 Kbytes Page：12 Pages	RF Power Field Effect Transistors The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. • GSM and GSM EDGE Performance, Full F 文件：610.58 Kbytes 页数：12 Pages	MOTOROLA 摩托罗拉	MOTOROLA

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技术参数

Min Frequency(MHz)：
960
Max Frequency(MHz)：
1215
Bias Voltage(V)：
28.0
Pout(W)：
5.00
Gain(dB)：
8.50
Efficiency(%)：
45
Type：
Bipolar
Package：
Flange Ceramic Pkg
Package Category：
Ceramic Flange Mount

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市联世界科技有限公司	MRF19090S	MOTOROLA	24+/25+		20	原装正品现货库存价优	询价
深圳市粤科源兴科技有限公司	MRF134	M/A-COM	13+		1693	原装分销	询价
深圳市毅创腾电子科技有限公司	MRF150	MRF			3200	原装长期供货!	询价
深圳市勤思达科技有限公司	MRF1946	东芝			100	原装现货,价格优惠	询价
芯有半导体（深圳）有限公司	MRF19085S	FREESCALE	05/06+		36	全新原装100真实现货供应	询价
深圳市欧立现代科技有限公司	MRF186	MOTO	24+	SOP	6980	原装现货,可开13%税票	询价
深圳市益百分电子有限公司	MRF137	MOT	06+	TO59	2500	原装现货价格有优势量大可以发货	询价
深圳市卓越微芯电子有限公司	MRF1550FN	FREESCA	25+		4	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市弘为电子有限公司	MRF1550T1	原厂	24+	原厂封装	7860	原装现货假一罚十	询价
深圳市恒创达实业有限公司	MRF19030L	FREESCALE	17+	SMD	6200	100%原装正品现货	询价

更多MRF1供应商更新时间2026-1-17 14:30:00

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