MRF18085BLSR3资料datasheet下载供应商报价-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
MRF18085BLSR3	文件：445.63 Kbytes Page：12 Pages	RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. • GSM and GSM EDGE Performance, Full Frequency Band (193 文件：445.63 Kbytes 页数：12 Pages	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF18085BLSR3	文件：610.58 Kbytes Page：12 Pages	RF Power Field Effect Transistors The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. • GSM and GSM EDGE Performance, Full F 文件：610.58 Kbytes 页数：12 Pages	Motorola 摩托罗拉	Motorola
MRF185	文件：0 bytes Page：0 Pages	高频管	Motorola 摩托罗拉上传：深圳市金嘉锐电子有限公司	Motorola
MRF19030LSR3	文件：0 bytes Page：0 Pages	TO-272	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体上传：深圳庞田科技有限公司	freescale
MRF21045LSR3	文件：0 bytes Page：0 Pages	TO-272	FREESCALE/飞思卡尔上传：深圳庞田科技有限公司	FREESCALE/飞思卡尔

更多MRF18085BLSR3供应商更新时间2025-11-29 18:28:00