N-CHANNEL BROADBAND RF POWER MOSFETs

Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of these devices make possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 150 MHz, 28 V:

文件：107.38 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

N-CHANNEL BROADBAND RF POWER MOSFET

Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands. N–Channel enhancement mode MOSFET • Guaranteed

文件：147.83 Kbytes 页数：8 Pages

MACOM

N-CHANNEL BROADBAND RF POWER MOSFETs

Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of these devices make possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 150 MHz, 28 V:

文件：107.38 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

The RF MOSFET Line 80W, 175MHz, 28V

Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. N–Channel enhancement mode MOSFET • G

文件：229.39 Kbytes 页数：9 Pages

MA-COM

The RF MOSFET Line 125W, 200MHz

. . . designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 125 Watts Minimum Gain = 9.0 dB Efficiency = 50 (Min) • Excellent Thermal Stability, Ideally Suited For Class AOperati

文件：333.77 Kbytes 页数：11 Pages

MA-COM

N-CHANNEL MOS BROADBAND RF POWER FET

. . . designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 125 Watts Minimum Gain = 9.0 dB Efficiency = 50 (Min) • Excellent Thermal Stability, Ideally Suited For Class AOperati

文件：168.05 Kbytes 页数：10 Pages

MOTOROLA

摩托罗拉

N-CHANNEL MOS BROADBAND RF POWER FETs

The RF MOSFET Line RF Power Field-Effect Transistors N-Channel Enhancement-mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transm

文件：214.11 Kbytes 页数：11 Pages

MACOM

RF POWER FIELD-EFFECT TRANSISTOR

DESCRIPTION: The ASI MRF175GU is a N-Channel Enhancement-Mode Push Pull MOSFET, Designed for FM, and TV Solid State Transmitter Applications up to 500 MHz.

文件：38.37 Kbytes 页数：1 Pages

ASI

The RF MOSFET Line 200/150W, 500MHz, 28V

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands. N–Channel enhancement mode

文件：447.7 Kbytes 页数：16 Pages

MA-COM

RF Power Field-Effect Transistors

The RF MOSFET Line RF Power ​​​​​​​Field-Effect Transistors N–Channel Enhancement–Mode Designedfor broadband commercial and military applications using push pull circuitsat frequencies to 500 MHz. The high power, high gain and broadband performanceof these devices makes possible solid state

文件：110.09 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司