RF POWER FIELD EFFECT TRANSISTORS

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amp

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MOTOROLA

摩托罗拉

RF POWER FIELD EFFECT TRANSISTORS

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amp

文件：525.11 Kbytes 页数：12 Pages

MOTOROLA

摩托罗拉

RF POWER FIELD EFFECT TRANSISTORS

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amp

文件：525.11 Kbytes 页数：12 Pages

MOTOROLA

摩托罗拉

MOS LINEAR RF POWER FET

Designed primarily for linear large–signal output stages to 80 MHz. • Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts Power Gain = 21 dB (Typ) Efficiency = 45 (Typ)

文件：190.55 Kbytes 页数：7 Pages

MACOM

Linear RF Power MOSFET 600W, to 80MHz

Designed primarily for linear large signal output stages to 80 MHz. • Specified 50 volts, 30 MHz characteristics Output power = 600 watts Power gain = 21 dB (typ.) Efficiency = 45 (typ.)

文件：327.06 Kbytes 页数：9 Pages

MA-COM

MOS LINEAR RF POWER FET

Designed primarily for linear large–signal output stages to 80 MHz. • Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts Power Gain = 21 dB (Typ) Efficiency = 45 (Typ)

文件：178.82 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

RF Power Field Effect Transistors

Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in 12.5 volt mobile FM equipment. • Specified Performance @ 470 MHz, 12.5 V

文件：437.37 Kbytes 页数：20 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in 12.5 volt mobile FM equipment. • Specified Performance @ 470 MHz, 12.5 V

文件：437.37 Kbytes 页数：20 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

The Broadband RF TMOS짰 2W, 500MHz, 28V

Designed for wideband large signal amplifier and oscillator applications to 500MHz N–Channel enhancement mode • Guaranteed 28 volt, 500 MHz performance Output power = 2.0 watts Minimum gain = 16 dB (Min.) Efficiency = 55 (Typ.) • Facilitates manual gain control, ALC and modulati

文件：880.74 Kbytes 页数：18 Pages

MA-COM

TMOS BROADBAND RF POWER FET

The RF TMOS® Line Power Field Effect Transistor N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 500 MHz Performance Output Power = 2.0 Watts Minimum Gain = 16 dB (Min) Efficiency = 55 (Typ) •

文件：493.99 Kbytes 页数：16 Pages

MACOM