RF POWER FIELD EFFECT TRANSISTORS

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amp

文件：525.11 Kbytes 页数：12 Pages

Motorola

摩托罗拉

RF POWER FIELD EFFECT TRANSISTORS

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amp

文件：525.11 Kbytes 页数：12 Pages

Motorola

摩托罗拉

5.0V Input voltage, 1.5mT High sensitivity CMOS MR Magnetic Sensor Switch

GENERAL DESCRIPTIONS MRX1550H series are monolithic ICs with built-in MR magnet resistive element and CMOS switch. It becomes the non-contact switch with low current consumption, high sensitivity and reliability which is combined with magnet. A horizontal magnetic field parallel to the electr

文件：1.25598 Mbytes 页数：14 Pages

ANASEMAnaSem Hong Kong Limited.

安纳森半导体安纳森半导体香港有限公司

5.0V Input voltage, 1.5mT High sensitivity CMOS MR Magnetic Sensor Switch

GENERAL DESCRIPTIONS MRX1550H series are monolithic ICs with built-in MR magnet resistive element and CMOS switch. It becomes the non-contact switch with low current consumption, high sensitivity and reliability which is combined with magnet. A horizontal magnetic field parallel to the electr

文件：1.25598 Mbytes 页数：14 Pages

ANASEMAnaSem Hong Kong Limited.

安纳森半导体安纳森半导体香港有限公司

RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

文件：166.23 Kbytes 页数：5 Pages

ADPOW