RF POWER FIELD EFFECT TRANSISTORS

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amp

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Motorola

摩托罗拉

175 MHz, 50 W, 12.5 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET

恩XP

高频管

Motorola

摩托罗拉

上传：深圳市华来深电子有限公司

NI-780S

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

上传：深圳庞田科技有限公司

高频管

Motorola

摩托罗拉

上传：深圳市金嘉锐电子有限公司