RF Power Field Effect Transistor

1.80-1.88 GHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFET Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for GSM and GSM EDGE cellular radio applications.

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freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

1.80-1.88 GHz, 90 W, 26 V Lateral N-Channel RF Power MOSFET

Overview The MRF18090AR3 is designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for GSM and GSM EDGE cellular radio applications.Archived content is no longer updated \n•GSM and GSM EDGE Performances, Full Frequency Band\nPower Gain: 13.5 dB (Typ) @ 90 Watts CW\nEfficiency: 52% (Typ) @ 90 Watts CW\n\n\n•Capable of Handling 10:1 VSWR, @ 26 Vdc, 90 Watts CW Output Power\n\n•Internally Matched for Ease of Use\n\n•High Gain, High Efficiency and High Linearity\n\n;

恩XP

高频管

Motorola

摩托罗拉

上传：深圳市金嘉锐电子有限公司

TO-272

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

上传：深圳庞田科技有限公司

TO-272

FREESCALE/飞思卡尔

上传：深圳庞田科技有限公司