MRF18090AR3

RF Power Field Effect Transistor

1.80-1.88GHz,90W,26VLATERALN-CHANNELRFPOWERMOSFET DesignedforGSMandGSMEDGEbasestationapplicationswithfrequenciesfrom1.8to2.0GHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforGSMandGSMEDGEcellularradioapplications.

MRF18090AR3

1.80-1.88 GHz, 90 W, 26 V Lateral N-Channel RF Power MOSFET; \n•GSM and GSM EDGE Performances, Full Frequency Band\nPower Gain: 13.5 dB (Typ) @ 90 Watts CW\nEfficiency: 52% (Typ) @ 90 Watts CW\n\n\n•Capable of Handling 10:1 VSWR, @ 26 Vdc, 90 Watts CW Output Power\n\n•Internally Matched for Ease of Use\n\n•High Gain, High Efficiency and High Linearity\n\n•Integrated ESD Protection\n\n•Designed for Maximum Gain and Insertion Phase Flatness\n\n•Excellent Thermal Stability\n\n•Characterized with Series Equivalent Large–Signal Impedance Parameters\n\n•RoHS Compliant\n\n•In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.\n\n;

Overview The MRF18090AR3 is designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for GSM and GSM EDGE cellular radio applications.Archived content is no longer updated and is made available for historical reference only.\n

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