The RF MOSFET Line RF POWER FIELD-EFFECT TRANSISTOR Channel Enhancement-Mode Lateral MOSFET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large–signal, common

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MOTOROLA

摩托罗拉

1.0 GHz, 120 W, 28 V Lateral N-Channel Broadband RF Power MOSFET

Overview \"MRF186\" removed from active portfolio. Possible Replacement Part: \"MRF9120LR3\".The MRF186 is designed for broadband commercialand industrial applications with frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this device makes it ideal for large–signal, co \n•Guaranteed Performance @ 960 MHz, 28 Volts\n Output Power — 120 Watts (PEP)\n\tPower Gain — 11 dB\n\tEfficiency — 30%\n\tIntermodulation Distortion —  –28 dBc\n•Excellent Thermal Stability\n•100% Tested for Load Mismatch Stress at all Phase Angles with\n\t5:1 VSWR @ 28 Vdc, 960 MHz, 120 W;

恩XP

Silicon Complementary Transistors General Purpose Output & Driver for Audio Amplifier

Description: The NTE186 (NPN) and NTE187 (PNP) are silicon complementary transistors in a TO202 type case designed for use as output and driver stages of amplifiers operating at frequencies from DC to greater than 1MHz, series, shunt, and switching regulators, low and high frequency inverters/c

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NTE

Silicon Complementary Transistors Medium Power Audio Amplifier

Features: • 5W Output in Complementary Pair

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NTE

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

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STMICROELECTRONICS

意法半导体