MRF21030LSR3

RF Power Field Effect Transistors

TheRFMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom2.0to2.2GHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN-PCS/cellul

MRF21030LSR3

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

RFPowerFieldEffectTransistors N--ChannelEnhancement--ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom2000to2200MHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN--PCS/cellularradioandWL

MRF21030LSR3

2200 MHz, 30 W, 28 V Lateral N-Channel RF Power MOSFET; \n•Wideband CDMA Performance: –45 dB ACPR @ 4.096 MHz, 28 Volts\n   Output Power: 3.5 Watts\n   Power Gain: 14 dB\n   Efficiency: 15%\n\n•Capable of Handling 10:1 VSWR, @ 28 Vdc, 2110 MHz, 30 Watts CW Output Power\n\n•High Gain, High Efficiency and High Linearity\n\n•Integrated ESD Protection\n\n•Designed for Maximum Gain and Insertion Phase Flatness\n\n•Excellent Thermal Stability\n\n•Characterized with Series Equivalent Large-Signal Impedance Parameters\n\n•Low Gold Plating Thickness on Leads, 40µ″ Nominal.\n\n•RoHS Compliant\n\n•In Tape and Reel. R3 suffix = 250 Units per 32 mm, 13 inch Reel.\n\n;

Overview The MRF21030LSR3 is designed for PCN and PCS base station applications with frequencies from 2000 to 2200 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications.\nArchived content is no longer updated and is made available for historical reference only.\n