LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

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MOTOROLA

摩托罗拉

RF Power Field Effect Transistors

Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. • Specified Two-Tone Performance @ 2000 MHz, 26 Volts Output Power ó 10 Watts PEP Power Gain ó 10.5 dB

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FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

10 W, 2000 MHz, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line\nRF Power Field Effect Transistors\nN–Channel Enhancement–Mode Lateral MOSFETs\n\nDesigned for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.• Specified Two–

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2000 MHz, 10 W, 26 V Lateral N-Channel Broadband RF Power MOSFET

Overview MRF282SR1 removed from active portfolio. View replacement parts via Part Number Search. \n•Specified Two-Tone Performance @ 2000 MHz, 26 Volts\nOutput Power = 10 Watts PEP\n\tPower Gain = 10.5 dB\n\tEfficiency = 28%\n\tIntermodulation Distortion = –31 dBc\n\n•Specified Single-Tone Performance @ 2000 MHz, 26 Volts\nOutput Power = 10 Watts CW\n\tPower Gain = 9.5 dB\n\tEfficiency = 35;

恩XP