NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF390 is a Common Emitter Device Designed for Class A , AB and C Amplifier Applications in the 100 - 500 MHz Military Communications Band. FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting • Input Matching

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ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:\nThe ASI MRF390 is a Common Emitter Device Designed for Class A , AB and C Amplifier Applications in the 100 - 500 MHz Military Communications Band.FEATURES INCLUDE:\n• Gold Metalization\n• Emitter Ballasting\n• Input Matching

ASI Semiconductor

Silicon Complementary Transistors General Purpose

Description: The NTE390 (NPN) and NTE391 (PNP) are silicon compelementary transistors in a TO218 type package designed for general purpose power amplifier and switching applications. Features: ● 10A Collector Current ● Low Leakage Current: ICEO = 0.7mA @ VCE = 60V ● Excellent DC Gain: hFE = 4

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NTE

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 90 Volts Forward Current - 3.0 Amperes FEATURES * Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 * Metal silicon junction, majority carrier conduction * Guardring for overvoltage protection * Low power loss, high efficiency * High curre

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ZOWIE

智威

SCHOTTKY BARRIER RECTIFIER DIODES

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EIC