NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF392 is a Common Emitter Device Designed for Class A, AB and C Amplifier Applications in the 300 - 500 MHz Military Communications Band. FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting • Input Matching

文件：18.69 Kbytes 页数：1 Pages

ASI

The RF Line Controlled ?쏲??Broadband Power Transistor 125W, 30 to 500MHz, 28V

Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 V, 400 MHz characteristics — Output power = 125 W Typical gain = 10 dB Efficiency = 55 (typ.) • Built–in input impedance matching networks for broadban

文件：222.65 Kbytes 页数：6 Pages

MA-COM

BROADBAND PUSH-PULL RF POWER TRANSISTOR NPN SILICON

The RF Line ​​​​​​​NPN Silicon Push-Pull RF Power Transistor Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics — Output Power = 125 W Typical Gain = 10 dB Efficiency = 55

文件：145.62 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

Tthe RF Line NPN Silicon Push-Pull RF Power Transistor

The RF Line NPN Silicon Broadband Push–Pull RF Power Transistor Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics — Output Power = 125 W Typical Gain = 10 dB Efficiency =

文件：165.13 Kbytes 页数：4 Pages

MACOM

The RF Line Controlled ?쏲??Broadband Power Transistor

文件：222.65 Kbytes 页数：6 Pages

MA-COM

125 W, 30 to 500 MHz CONTROLLED “Q” BROADBAND PUSH–PULL RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon Push-Pull RF Power TransistorDesigned primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range.• Specified 28 Volt, 400 MHz Characteristics —\n   Output Power = 125 W\n   Typical Gain = 10 dB\n   Efficiency = 55% (Typ)\n•

恩XP

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:\nThe ASI MRF392 is a Common Emitter Device Designed for Class A, AB and C Amplifier Applications in the 300 - 500 MHz Military Communications Band.FEATURES INCLUDE:\n• Gold Metalization\n• Emitter Ballasting\n• Input Matching

ASI Semiconductor

Trans RF BJT NPN 30V 16A 8-Pin Case 744A-01

NJS

新泽西半导体

Package：744A-01；包装：托盘 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS 2NPN EMITTR 30V 744A-01

MACOM Technology Solutions

The RF Line Controlled Broadband Power Transistor

文件：222.65 Kbytes 页数：6 Pages

MA-COM