NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF422 is Designed for 2.0 MHz to 30 MHz, 28 V High Power Linear Amplifier Applications. For hFE Matched Pairs Order ASI MRF422MP.

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ASI

The RF Line NPN Silicon Power Transistor 150W(PEP), 30MHz, 28V

Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 28 V, 30 MHz characteristics — Output power = 150 W (PEP) Minimum gain = 10 dB Efficiency = 40 • Intermodulation distortion @ 150 W (PEP) —IMD = –30 dB (min.) • 100 tested for load m

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MA-COM

RF POWER TRANSISTORS NPN SILICON

The RF Line NPN Silicon RF Power Transistor Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 28 Volt, 30 MHz Characteristics — Output Power = 150 W (PEP) Minimum Gain = 10 dB Efficiency = 40 • Intermodulation Distortion @ 150 W (P

文件：97.1 Kbytes 页数：4 Pages

Motorola

摩托罗拉

The RF Line NPN Silicon RF Power Transistor

The RF Line NPN Silicon RF Power Transistor Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 28 Volt, 30 MHz Characteristics — Output Power = 150 W (PEP) Minimum Gain = 10 dB Efficiency = 40 • Intermodulation Distortion @ 150 W (P

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MACOM

NPN Silicon RF power transistor

Description: MRF422 is designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz. Features: Specified 28 Volt, 30 MHz Characteristics Output Power = 150 W (PEP), Minimum Gain = 10 dB, Efficiency = 40 Intermodulation Distortion @ 150 W (PEP) , IMD = –30 d

文件：39.36 Kbytes 页数：1 Pages

ELEFLOW

The RF Line NPN Silicon Power Transistor 150W(PEP), 30MHz, 28V

文件：236.16 Kbytes 页数：6 Pages

MA-COM

Bipolar

Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz. ·Specified 28 V, 30 MHz Characteristics: Output Power = 150 W (PEP), Efficiency = 40%,Minimum Gain = 10 dB\n·Intermodulation Distortion @ 150 W (PEP) —IMD = –30 dB (min.)\n·100% Test for Load Mismatch at all Phase Angelswith 30:1 VSWR;

MACOM

Trans RF BJT NPN 40V 20A 4-Pin Case 211-11

NJS

Package：211-11，2 型；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 35V 211-11

MACOM Technology Solutions

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF422 is Designed for 2.0 MHz to 30 MHz, 28 V High Power Linear Amplifier Applications. For hFE Matched Pairs Order ASI MRF422MP.

文件：21.15 Kbytes 页数：1 Pages

ASI