MRF282S中文资料10 W, 2000 MHz, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs数据手册恩XP规格书

描述 Description

The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs

Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.
• Specified Two–Tone Performance @ 2000 MHz, 26 Volts
  Output Power = 10 Watts (PEP)
  Power Gain = 11 dB
  Efficiency = 30%
  Intermodulation Distortion = –30 dBc
• Specified Single–Tone Performance @ 2000 MHz, 26 Volts
  Output Power = 10 Watts (CW)
  Power Gain = 11 dB
  Efficiency = 40%
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• S–Parameter Characterization at High Bias Levels
• Excellent Thermal Stability
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 10 Watts (CW) Output Power
• Gold Metallization for Improved Reliability