MRF275G中文资料The RF MOSFET Line 150W, 500MHz, 28V数据手册MACOM规格书

描述 Description

Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz.

特性 Features

·N-Channel Enhancement Mode Device
·100% Tested for Load Mismatch at all Phase Angles with VSWR 30:1
·Overall lower capacitance @ 28 V: Ciss — 135 pF, Crss — 17 pF, Coss — 140 pF
·Typical Data for Power Amplifiers in Industrial and Commercial Applications:
·Typical performance @ 225 MHz, 28 Vdc: OutputPpower — 200 W, Power Gain — 15 dB, Efficiency — 65%
·Simplified AVC, ALC and Modulation
·Typical Performance @ 400 MHz, 28 Vdc: Output Power — 150 W, Power Gain — 12.5 dB, Efficiency — 60%
·Guaranteed Performance @ 500 MHz, 28 Vdc: Output power — 150 W, Power Gain — 10 dB, (min.), Efficiency — 50% (min.)

应用 Application

·Aerospace and Defense
·ISM