MRF275G数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

The RF MOSFET Line
Power Field-Effect Transistor N–Channel Enhancement–ModeDesigned primarily for wideband large–signal output and driver stages from 100 – 500 MHz.
• Guaranteed Performance @ 500 MHz, 28 Vdc
  Output Power — 150 Watts
  Power Gain — 10 dB (Min)
  Efficiency — 50% (Min)
  100% Tested for Load Mismatch at all Phase Angles with VSWR 30:1
• Overall Lower Capacitance @ 28 V
  Ciss— 135 pF
  Coss— 140 pF
  Crss— 17 pF
• Simplified AVC, ALC and Modulation
Typical data for power amplifiers in industrial and commercial applications:
• Typical Performance @ 400 MHz, 28 Vdc
  Output Power — 150 Watts
  Power Gain — 12.5 dB
  Efficiency — 60%
• Typical Performance @ 225 MHz, 28 Vdc
  Output Power — 200 Watts
  Power Gain — 15 dB
  Efficiency — 65%