RF Power Field-Effect Transistors

The RF Sub–Micron MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in class A and cla

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MOTOROLA

摩托罗拉

RF Power Field Effect Transistors

The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in class A and cla

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2.0 GHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFET

Overview The MRF284SR1 is designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in Class A and AB for PCN–PCS/cellular radio and wireless local loop.MRF284SR1 removed from active por \n•Specified Two–Tone Performance @ 2000 MHz, 26 Volts\n Output Power = 30 Watts (PEP)\n Power Gain = 9 dB\n Efficiency = 30%\n Intermodulation Distortion = –29dBc\n•Typical Single–Tone Performance at 2000 MHz, 26 Volts\n Output Power = 30 Watts (CW)\n\tPower Gain = 9.5 dB\n\tEfficiency = 45%

恩XP

Trans RF MOSFET N-CH 65V 3-Pin NI-360S T/R

NJS

新泽西半导体