RF Power Field Effect Transistors

RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequen cies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common source am

文件：372.6 Kbytes 页数：10 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

The RF MOSFET Line RF Power Field Effect Transistors N- Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequen cies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large- sig

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MOTOROLA

摩托罗拉

470-860 MHz, 75 W, 32 V Lateral N-Channel Broadband RF Power MOSFET

Overview The MRF373ALR1 is designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 28/32 volt transmitter equipment.\nArchived c \n•Typical CW Performance at 860 MHz, 32 Volts, Narrowband Fixture\nOutput Power: 75 Watts\nPower Gain: 18.2 dB\nEfficiency: 60%\n\n•Capable of Handling 10:1 VSWR @ 32 Vdc, 860 MHz, 75 Watts CW Output Power\n\n•Integrated ESD Protection\n\n•Excellent Thermal Stability\n\n•Characterized with Seri;

恩XP

RF Power Field Effect Transistors

RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequen cies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common source am

文件：372.6 Kbytes 页数：10 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体