RF POWER FIELD EFFECT TRANSISTOR

Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large–signal, common source amplifier applications in 28/32 volt transmitter equipment. • Typical Two–Tone Performance @ 860

文件：783.07 Kbytes 页数：12 Pages

MOTOROLA

摩托罗拉

RF Power Field Effect Transistors

文件：370.47 Kbytes 页数：12 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

文件：370.47 Kbytes 页数：12 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

470-860 MHz, 130 W, 32 V Lateral N-Channel Broadband RF Power MOSFET

Overview The MRF374A is designed for broadband commercialand industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 28/32 volt transmitter equipment.Archived content \n•Typical Two–Tone Performance at 860 MHz, 32 Volts, Narrowband Fixture\nOutput Power: 130 Watts PEP\nPower Gain: 17.3 dB\nEfficiency: 41%\n\tIMD: –32.5 dBc\n\n•Capable of Handling 10:1 VSWR @ 32 Vdc, 857 MHz, 130 Watts CW Output Power\n\n•Integrated ESD Protection\n\n•Excellent Thermal Stabili;

恩XP