RF POWER TRANSISTORS

NPN SILICON RF POWER TRANSISTORS . . . designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. ● Specified 12.5 Volt, 30 MHz Characteristics - Output Power = 60 Watts Minimum Gain = 13 dB Efficiency = 55

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Motorola

摩托罗拉

60 W-30 MHz RF POWER TRANSISTORS NPN SILICON

恩XP

SUPER FAST RECTIFIER

Reverse Voltage: 50 to 600 Volts Forward Current:4.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ▪ Low forward voltage drop ▪ High current capability, High reliability ▪ Low power loss, high efficiency ▪ High surge current capability

文件：62.03 Kbytes 页数：2 Pages

JINGHENG

晶恒

SUPER FAST RECTIFIER

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JINGHENG

晶恒

N-Channel Enhancement Mode Field Effect Transistor

General Description Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

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Fairchild

仙童半导体