RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other applications requiring high breakdown characteristics. Features • Silicon NPN, high Frequency, high breakdown, To-39 packaged, Transistor • Maximum Unilate

文件：86.95 Kbytes 页数：4 Pages

MICROSEMI

美高森美

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other applications requiring high breakdown characteristics. Features • Silicon NPN, high Frequency, high breakdown Transistor • Maximum Unilateral Gain = 13.5 dB (t

文件：302.88 Kbytes 页数：4 Pages

ADPOW

RF/Microwave Si BJT Power Devices & Pallets

Microchip

微芯科技

Package：TO-39；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 70V 1.5GHZ TO39

MICROSEMI

美高森美