RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed for use in high gain, low noise small-signal amplifiers. Features • Fully Implanted Base and Emitter Structure. • High Gain, Gain at Optimum Noise Figure = 14 dB @ 1 GHz • Low Noise Figure – 1.3dB @ 1GHz • Ftau - 8.0 GHz @ 6v, 30mA • Cost Effective Macro X Package

文件：164.79 Kbytes 页数：5 Pages

MICROSEMI

美高森美

NPN SILICON RF TRANSISTOR

DESCRIPTION: The ASI MRF951 is Designed for high gain. Low noise small-signal amplifiers. Applications up to 2.0 GHz. FEATURES: • Low Noise Figure • High Gain • Omnigold™ Metalization System

文件：27.06 Kbytes 页数：1 Pages

ASI

NPN SILICON RF TRANSISTOR

ASI Semiconductor

NPN Silicon Low Noise, High-Frequency Transistors

The RF Line NPN Silicon Low Noise, High-Frequency Transistors Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages. • Fully Implanted Base and Emitter Structure • 18 Finger, 1.25 Micron Geom

文件：215.44 Kbytes 页数：16 Pages

MOTOROLA

摩托罗拉

NPN SILICON RF TRANSISTOR

DESCRIPTION: The ASI MRF951V3 is Designed for high gain. Low noise small-signal amplifiers applications up to 2.0 GHz. FEATURES: • Low Noise Figure • High Gain • Omnigold™ Metalization System

文件：48.31 Kbytes 页数：1 Pages

ASI

NPN SILICON RF TRANSISTOR

ASI Semiconductor