RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed primarily for wideband large signal stages in the UHF frequency range. Features • Specified @ 12.5 V, 870 MHz Characteristics • Output Power = 1.5 W • Minimum Gain = 8 dB • Efficiency 60 (Typ) • Cost Effective PowerMacro Package • Electroless Tin Plated Leads for Impro

文件：150.3 Kbytes 页数：5 Pages

ADPOW

BLINKING LED LAMPS

DESCRIPTION MSB557D is red LED lamp with a 5mm diameter red diffused lens. The built-in IC flashes the lamp on/off and can be driven directly by standard TTL and CMOS circuits, eliminating the need for external switching circuitry.

文件：44.11 Kbytes 页数：1 Pages

MICRO-ELECTRONICS

SURFACE MOUNT SILICON ZENER DIODES

VZ : 3.9 - 200 Volts PD : 3 Watts FEATURES : * Complete Voltage Range 3.9 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free

文件：28.55 Kbytes 页数：2 Pages

EIC

TRANSISTOR INVERTOR INVERTER FOR AIR CONDITIONOR POWER TRANSISTOR BASE DRIVE

Transistor Inverter Inverter For Air Conditioner Power Transistor Base Drive The TOSHIBA TLP557 consists of a GaAℓAs light emitting diode and an integrated photodetector. This unit is 8−lead DIP package. TLP557 is suitable for base driving circuit of power transistor module up to 20A. Extern

文件：304.51 Kbytes 页数：6 Pages

TOSHIBA

东芝