RF Power Field Effect Transistor

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications

文件：365.97 Kbytes 页数：12 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件：385.77 Kbytes 页数：12 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

1930-1990 MHz, 38 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFET

Overview MRF5P20180HR6 removed from active portfolio. View replacement parts via Part Number Search. \n•Typical 2-Carrier W-CDMA Performance for VDD = 28 Volts, IDQ = 1600 mA, Pout = 38 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.\nPower Gain: 14 dB\n\tDrain Efficiency: 26%\n\tIM3 @ 10 MHz Offset: –37.5 dBc in 3.84 MHz Channel Band;

恩XP

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件：385.77 Kbytes 页数：12 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体