RF Power Field Effect Transistors

文件：617.51 Kbytes 页数：12 Pages

MOTOROLA

摩托罗拉

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

1930-1990 MHz, 32 W AVG., 28 V 2 x N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2-Carrier N-CDMA Performance for VDD = 28 Volts, IDQ =

文件：439.88 Kbytes 页数：12 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

1930-1990 MHz, 32 W AVG., 28 V 2 x N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2-Carrier N-CDMA Performance for VDD = 28 Volts, IDQ =

文件：439.88 Kbytes 页数：12 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件：439.1 Kbytes 页数：10 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件：439.1 Kbytes 页数：10 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

文件：617.51 Kbytes 页数：12 Pages

MOTOROLA

摩托罗拉

RF Power Field Effect Transistors

文件：617.51 Kbytes 页数：12 Pages

MOTOROLA

摩托罗拉

1930-1990 MHz, 32 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs

Overview The MRF5S19150HR3 and MRF5S19150HSR3 are designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.\nArchived content is no longer updated and is made available for historical reference only. \n•Typical 2–Carrier N–CDMA Performance for VDD = 28 Volts, \nIDQ = 1400 mA, Pout = 32 Watts Avg., Full Frequency Band, IS–95 \nCDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz.\nPAR = 9.8 dB @ 0.01% Probability on CCDF.\nPower Gain:  14 dB\n\tDrain Efficienc;

恩XP

1990 MHz, 32 W, 28 V Lateral N-Channel RF Power MOSFET

Overview Replaced by MRF5S19150HR3. \"H\" suffix indicates lower thermal resistance package. The MRF5S19150R3 is designed for PCN and PCS base station applications at frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications \n•Typical 2–Carrier N–CDMA Performance for VDD = 28 Volts,\nPout = 32 Watts, IDQ = 1400 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz\nIS–95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)\n1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured\nover a 30 kHz Bandwidth at f1 –885 kHz and ;

恩XP

1990 MHz, 32 W, 28 V Lateral N-Channel RF Power MOSFET

Overview Replaced by MRF5S19150HSR3. \"H\" suffix indicates lower thermal resistance package. The MRF5S19150SR3 is designed for PCN and PCS base station applications at frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. \n•Typical 2–Carrier N–CDMA Performance for VDD = 28 Volts,\nPout = 32 Watts, IDQ = 1400 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz\nIS–95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)\n1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured\nover a 30 kHz Bandwidth at f1 –885 kHz and ;

恩XP