MRF5S19150H中文资料1930-1990 MHz, 32 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs数据手册恩XP规格书

描述 Description

Overview The MRF5S19150HR3 and MRF5S19150HSR3 are designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
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特性 Features

•Typical 2–Carrier N–CDMA Performance for VDD = 28 Volts,
IDQ = 1400 mA, Pout = 32 Watts Avg., Full Frequency Band, IS–95
CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz.
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain:  14 dB
\tDrain Efficiency:  26%
\tIM3 @ 2.5 MHz Offset:  –36.5 dBc in 1.2288 MHz Bandwidth
\tACPR @ 885 kHz Offset:  –50 dB in 30 kHz Bandwidth

•Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW Output Power

•Characterized with Series Equivalent Large–Signal Impedance Parameters

•Internally Matched for Ease of Use

•Qualified Up to a Maximum of 32 V Operation

•Integrated ESD Protection

•Lower Thermal Resistance Package

•Low Gold Plating Thickness on Leads, 40µ″ Nominal.

•RoHS Compliant

•In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.