MRF5S19060M中文资料1990 MHz, 12 W AVG., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs数据手册恩XP规格书

描述 Description

OverviewReplaced by MRF5S19060NR1(NBR1). There are no form, fit or function changes with this part replacement. The MRF5S19060MR1 and MRF5S19060MBR1 are designed for broadband commercial and industrial applications with frequenciesfrom 1930 to 1990 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common–source amplifier applications in 28 Volt base station equipment.

特性 Features

•Typical 2–carrier N–CDMA Performance: VDD = 28 Volts,
\tIDQ = 750 mA, Pout = 12 Watts Avg., Full Frequency Band. IS–95
\t(Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz.
\tPAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain: 14 dB
\tDrain Efficiency: 23%
\tIM3 @ 2.5 MHz Offset: –37 dBc in 1.2288 MHz Channel Bandwidth
\tACPR @ 885 kHz Offset: –51 dBc in 30 kHz Channel Bandwidth

•Capable of Handling 5:1 VSWR, @ 28 Vdc, 1990 MHz, 12 Watts Avg. Output Power

•Characterized with Series Equivalent Large–Signal Impedance Parameters

•Internally Matched for Ease of Use

•Integrated ESD Protection

•200°C Capable Plastic Package

•In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.