MRF5P21045NR1中文资料2110-2170 MHz, 10 W Avg., 28 V, 2 x W-CDMA, Dual Path Lateral N-Channel RF Power MOSFET数据手册恩XP规格书

描述 Description

The MRF5P21045NR1 is designed for W–CDMA base station
applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. Dual path topology suitable for Doherty,
quadrature, single-ended and push-pull applications.

特性 Features

Typical 2–Carrier W–CDMA Performance: VDD = 28 Volts,
IDQ = 500 mA, Pout = 10 Watts Avg., Full Frequency Band, Channel
Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain: 14.5 dB
\tDrain Efficiency: 25.5%
\tIM3 @ 10 MHz Offset: –37 dBc in 3.84 MHz Channel Bandwidth
\tACPR @ 5 MHz Offset: –39 dBc in 3.84 MHz Channel Bandwidth

Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 45 Watts CW Output Power

Characterized with Series Equivalent Large–Signal Impedance Parameters

Internally Matched for Ease of Use

Qualified Up to a Maximum of 32 VDD Operation

Integrated ESD Protection

200°C Capable Plastic Package

RoHS Compliant.

In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.