MRF5S19100H中文资料1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs数据手册恩XP规格书

描述 Description

Overview The MRF5S19100HR3 and MRF5S19100HSR3 are designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
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特性 Features

•Typical 2–Carrier N–CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 22 Watts Avg., Full Frequency Band, IS–95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel
Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain:13.9 dB
Efficiency:25.5%
IM3 @ 2.5 MHz Offset: –36.5 dBc in 1.2288 MHz Channel Bandwidth
ACPR @ 885 kHz Offset: –50.7 dBc in 30 kHz Channel Bandwidth


•Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW Output Power

•Characterized with Series Equivalent Large–Signal Impedance Parameters

•Internally Matched for Ease of Use

•Qualified Up to a Maximum of 32 VDD Operation

•Integrated ESD Protection

•Lower Thermal Resistance Package

•Low Gold Plating Thickness on Leads, 40µ″ Nominal.

•RoHS Compliant

•In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.