MRF5S19130SR3中文资料1990 MHz, 26 W AVG., 2 x N-CDMA, 28 V Lateral N-Channel RF Power MOSFET数据手册恩XP规格书

描述 Description

Overview Replaced by MRF5S19130HSR3. \"H\" suffix indicates lower thermal resistance package. The MRF5S19130SR3 is designed for PCN and PCS base station applications at frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

特性 Features

•Typical 2–Carrier N–CDMA Performance for VDD = 28 Volts,
IDQ = 1200 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz,
IS–95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)
1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured
over a 30 kHz Bandwidth at f1 –885 kHz and f2 +885 kHz. Distortion
Products Measured over 1.2288 MHz Bandwidth at f1 –2.5 MHz and
f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Output Power: 26 Watts Avg.
\tPower Gain: 13 dB
\tEfficiency: 25%
\tIM3: –37.0 dBc
\tACPR: –51 dB

•Internally Matched, Controlled Q, for Ease of Use

•High Gain, High Efficiency and High Linearity

•Integrated ESD Protection

•Designed for Maximum Gain and Insertion Phase Flatness

•Capable of Handling 10:1 VSWR, @ 28 Vdc, f1 = 1960 MHz, 110 Watts CW Output Power

•Excellent Thermal Stability

•Characterized with Series Equivalent Large–Signal Impedance Parameters

•Qualified Up to a Maximum of 32 V Operation

•Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.