The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellula

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MOTOROLA

摩托罗拉

2170 MHz, 28 W AVG., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFET

Overview Replaced by MRF5S21130HSR3. \"H\" suffix indicates lower thermal resistance package. The MRF5S21130SR3 is designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS \n•Typical 2–Carrier W–CDMA Performance for VDD = 28 Volts,\nIDQ = 1200 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth =\n3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 –5 MHz\nand f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW\n@ f1 –10 MHz and f2 +10 MHz, Peak/Avg. = 8;

恩XP

TO-270

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

上传：深圳庞田科技有限公司

高频管

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

上传：深圳市翔睿腾科技有限公司

SMD

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

上传：深圳市向鸿伟业电子有限公司