The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large--signal, common source amplifier applications in 26 volt base station equipment. • Speci

文件：510.8 Kbytes 页数：8 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistor

文件：332.8 Kbytes 页数：12 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistor

文件：510.8 Kbytes 页数：8 Pages

Motorola

摩托罗拉

921 - 960 MHz, 70 W, 26 V LATERAL N-CHANNEL RF POWER MOSFET

The RF MOSFET Line\nRF Power Field Effect Transistor\nN- Channel Enhancement - Mode Lateral MOSFET\n\nDesigned for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large- signal, common source amplifier applications in 26 volt base station equipment.\n

恩XP

RF Power Field Effect Transistor

文件：332.8 Kbytes 页数：12 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件：342.04 Kbytes 页数：10 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体