RF POWER FIELD EFFECT TRANSISTORS

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/ce l lu lar r

文件：400.11 Kbytes 页数：12 Pages

MOTOROLA

摩托罗拉

RF POWER FIELD EFFECT TRANSISTORS

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/ce l lu lar r

文件：400.11 Kbytes 页数：12 Pages

MOTOROLA

摩托罗拉

2170 MHz, 33 W AVG., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFET

Overview Replaced by MRF5S21150HSR3. \"H\" suffix indicates lower thermal resistance package. The MRF5S21150SR3 is designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS \n•Typical 2–Carrier W–CDMA Performance for VDD = 28 Volts,\nIDQ = 1300 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth =\n3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 –5 MHz\nand f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW\n@ f1 –10 MHz and f2 +10 MHz, Peak/Avg. = 8;

恩XP

RF POWER FIELD EFFECT TRANSISTORS

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/ce l lu lar r

文件：400.11 Kbytes 页数：12 Pages

MOTOROLA

摩托罗拉